DESCRIPTION
These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 ABSOLUTE MAXIMUM RATINGS
Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C EAS VGS dv/dt TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. N-Channel 100 2.1 1.7 8.4 2.0 0.016 35 ± 20 4.0 -55 to + 150 51 ± 20 4.3 P-Channel -100 -1.5 -1.2 -6.0 Units A W W/°C mJ V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. ––– ––– Max.
International Rectifier
