IRGPC50F Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: IRF

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IRGPC50F insulated gate bipolar transistor by IRF - Datasheet Preview

Datasheet Details

Part number	IRGPC50F
Manufacturer	IRF
File Size	269.66 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRGPC50F Download (PDF)

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of high-voltage, highcurrent applications.

TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.

Key Features

Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 1.7V @VGE = 15V, I C = 39A n-channel.

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