IRGPC50F Datasheet | IRF

Features - Switching-loss rating includes all "tail" losses - Optimized for medium operating frequency (1 to 10k Hz) See Fig. 1 for Current vs. Frequency curve Fast Speed IGBT VCES = 600V VCE(sat) ≤ 1.7V @VGE = 15V, I C = 39A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 70 39 280 280 ±20 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1N- m) Units V m J W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. - - - - Typ. - 0.24 - 6 (0.21) Max. - 40 - Units °C/W g (oz) Revision 0 C-87 To Order Previous Datasheet Index Next Data Sheet Electrical Characteristics @ T J = 25°C (unless otherwise...