IRGPC50MD2
IRGPC50MD2 is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
Features
- Short circuit rated -10µs @125°C, V GE = 15V
- Switching-loss rating includes all "tail" losses TM
- HEXFRED soft ultrafast diodes
- Optimized for medium operating frequency ( 1 to 10k Hz) See Fig. 1 for Current vs. Frequency curve
Short Circuit Rated Fast Co Pack IGBT
VCES = 600V VCE(sat) ≤ 2.0V
@VGE = 15V, IC = 35A
E n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
TO-247AC
Max.
600 60 35 120 120 25 120 10 ± 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m)
Units
µs V W
°C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Case
- IGBT Junction-to-Case
- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
- -
- -
- Typ.
- - 0.24
- 6 (0.21)
Max.
0.64 0.83
- 40
- Units
°C/W g...