IRGPC50M Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: IRF

Overview: Previous Datasheet Index Next Data Sheet PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR.

IRGPC50M insulated gate bipolar transistor by IRF - Datasheet Preview

Datasheet Details

Part number	IRGPC50M
Manufacturer	IRF
File Size	262.91 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRGPC50M Download (PDF)

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of high-voltage, highcurrent applications.

These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

Key Features

Short circuit rated - 10µs @ 125°C, V GE = 15V.
Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(sat) ≤ 2.2V @VGE = 15V, I C = 35A n-channel.

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