IRGPC50FD2
IRGPC50FD2 is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
Features
- Switching-loss rating includes all "tail" losses TM
- HEXFRED soft ultrafast diodes
- Optimized for medium operating frequency (1 to 10k Hz) See Fig. 1 for Current vs. Frequency curve
Fast Co Pack IGBT
VCES = 600V VCE(sat) ≤ 1.7V
@VGE = 15V, IC = 39A
E n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 70 39 280 280 25 280 ± 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m)
Units
°C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Case
- IGBT Junction-to-Case
- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
- -
- -
- Typ.
- - 0.24
- 6 (0.21)
Max.
0.64 0.83
- 40
- Units
°C/W g (oz)
Revision 1
C-125
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