IRGPF30F - INSULATED GATE BIPOLAR TRANSISTOR

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IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR by IRF - Datasheet Preview — Datasheet preview – IRGPF30F

Datasheet Details

Part number	IRGPF30F
Manufacturer	IRF
File Size	256.66 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPF30F Datasheet
Additional preview pages of the IRGPF30F datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 900V VCE(sat) ≤ 3.7V @VGE = 15V, I C = 11A n-channel.

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Published: Aug 23, 2005 |