IS42RM32800E Datasheet 2m X 32bits X 4banks Mobile Synchronous Dram

Manufacturer: ISSI (now Infineon)

Overview: IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IS42RM32800E
Manufacturer	ISSI (now Infineon)
File Size	588.96 KB
Description	2M x 32Bits x 4Banks Mobile Synchronous DRAM
Datasheet	IS42RM32800E IS42SM32800E Datasheet (PDF)

These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

All inputs and outputs are synchronized with the rising edge of the clock input.

JEDEC standard 3.3V, 2.5V, 1.8V power supply.
Auto refresh and self refresh.
All pins are compatible with LVCMOS interface.
4K refresh cycle / 64ms.
Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
Programmable CAS Latency : 2, 3 clocks.
All inputs and outputs referenced to the positive edge of the system clock.
Data mask function by DQM.

Part Number	Description
IS42RM32100C	512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32100D	512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32160C	512Mb Mobile Synchronous DRAM
IS42RM32160E	4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32200K	512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32200M	512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32400E	128Mb Mobile Synchronous DRAM
IS42RM32400F	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32400G	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32400H	1M x 32Bits x 4Banks Mobile Synchronous DRAM