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IS61LV6416 - 64K x 16 HIGH-SPEED CMOS STATIC RAM

General Description

bits.

technology.

Key Features

  • High-speed access time: 8, 10, 12 ns.
  • CMOS low power operation.
  • 61LV6416: 75 mW (typical) operating current 0.5 mW (typical) standby current.
  • 61LV6416L: 65 mW (typical) operating current 50 µW (typical) standby current.
  • TTL compatible interface levels.
  • Single 3.3V power supply.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temp.

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Full PDF Text Transcription (Reference)

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IS61LV6416 IS61LV6416L 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY ISSI® NOVEMBER 2005 FEATURES • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW (typical) operating current 0.5 mW (typical) standby current — 61LV6416L: 65 mW (typical) operating current 50 µW (typical) standby current • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.