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IS61LV6416

Manufacturer: ISSI (now Infineon)

IS61LV6416 datasheet by ISSI (now Infineon).

IS61LV6416 datasheet preview

IS61LV6416 Datasheet Details

Part number IS61LV6416
Datasheet IS61LV6416-ISSI.pdf
File Size 127.23 KB
Manufacturer ISSI (now Infineon)
Description 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS61LV6416 page 2 IS61LV6416 page 3

IS61LV6416 Overview

It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

IS61LV6416 Key Features

  • High-speed access time: 8, 10, 12 ns
  • CMOS low power operation
  • 61LV6416: 75 mW (typical) operating current 0.5 mW (typical) standby current
  • 61LV6416L: 65 mW (typical) operating current 50 µW (typical) standby current
  • TTL patible interface levels
  • Single 3.3V power supply
  • Fully static operation: no clock or refresh
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial temperature available
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

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