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IS61WV12824 - 128K x 24 HIGH-SPEED CMOS STATIC RAM

General Description

The ISSI IS61WV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits.

performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.

Key Features

  • High-speed access time: 8, 10 ns.
  • High-performance, low-power CMOS process.
  • TTL compatible interface levels.
  • Single power supply VDD 3.3V ± 5% for 8ns VDD 2.4V to 3.6V for 10ns.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Available in 119-pin Ball Grid Array (BGA) package.
  • Industrial temperature available.
  • Lead-free available.

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📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV12816BLL 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV12816EDBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV12816EFALL 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV12816EFBLL 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV1288EEBLL 256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61WV12824 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY SEPTEMBER 2020 FEATURES • High-speed access time: 8, 10 ns • High-performance, low-power CMOS process • TTL compatible interface levels • Single power supply VDD 3.3V ± 5% for 8ns VDD 2.4V to 3.6V for 10ns • Fully static operation: no clock or refresh required • Three state outputs • Available in 119-pin Ball Grid Array (BGA) package • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS61WV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.