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IS61WV25632ALL - 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

General Description

words by 32 bits.

formance CMOS technology.

Key Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply Vdd 1.65V to 2.2V (IS61WV25632Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV25632Bxx) spe.

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📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV25632ALS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632BLL 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632BLS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616ALL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616ALS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61WV25632ALL/ALS IS61WV25632BLL/BLS IS64WV25632BLL/BLS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY MAY 2023 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply Vdd 1.65V to 2.2V (IS61WV25632Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV25632Bxx) speed = 10ns for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.