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IS61WV25632BLL - 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS61WV25632BLL datasheet PDF. This datasheet also covers the IS61WV25632ALL variant, as both devices belong to the same 256k x 32 high-speed asynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

words by 32 bits.

formance CMOS technology.

Key Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply Vdd 1.65V to 2.2V (IS61WV25632Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV25632Bxx) spe.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV25632ALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS61WV12816DALL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DALS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV51216ALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV25632BLS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632ALL 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632ALS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616ALL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616ALS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61WV25632ALL/ALS IS61WV25632BLL/BLS IS64WV25632BLL/BLS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY MAY 2023 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply Vdd 1.65V to 2.2V (IS61WV25632Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV25632Bxx) speed = 10ns for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.