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IS66WVH8M8DBLL - 8M x 8 HyperRAM

Download the IS66WVH8M8DBLL datasheet PDF. This datasheet also covers the IS66WVH8M8DALL variant, as both devices belong to the same 8m x 8 hyperram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IS66WVH8M8DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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0[+SHU5$0Œ ,6:9+0'$//%// ,6:9+0'$//%// 2YHUYLHZ The IS66/67WVHM8'ALL/BLL are integrated memory device containing Mbit Pseudo StaticRandom Access Memory using a self-refresh DRAM array organized as M words by 8bits. The devicesupports a HyperBusinterface, Very Low Signal Count (Address, Command and data through 8 DQ pins), Hidden Refresh Operation, and Automotive Temperature Operation, designed specially for Mobile and Automotive applications. 'LVWLQFWLYH&KDUDFWHULVWLFV +SHU%XV70/RZ6LJQDO&RXQW,QWHUIDFH „ 9,2EXVVLJQDOV ± 6LQJOHHQGHGFORFN &. „ 9,2EXVVLJQDOV ± 'LIIHUHQWLDOFORFN &.&.