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IS67WV1M16EBLL Datasheet Ultra Low Power Pseudo CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS66WV1M16EALL IS66/67WV1M16EBLL 16Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are high-speed,16M bit static RAMs organized as 1M words by 16 bits.

It is fabricated using ISSI’s high performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Key Features

  • High-Speed access time : - 70ns ( IS66WV1M16EALL ) - 60ns (IS66/67WV1M16EBLL ).
  • CMOS Lower Power Operation.
  • Single Power Supply.
  • VDD =1.7V~1.95V( IS66WV1M16EALL ).
  • VDD =2.5V~3.6V (IS66/67WV1M16EBLL ).
  • Three State Outputs.
  • Data Control for Upper and Lower bytes.
  • Lead-free Available.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS67WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS67WVC1M16ALL 16Mb Async/Page/Burst CellularRAM
IS67WVC2M16EALL 32Mb Async/Page/Burst CellularRAM
IS67WVC2M16ECLL 32Mb Async/Page/Burst CellularRAM
IS67WVC4M16ALL 64Mb Async/Page/Burst CellularRAM
IS67WVC4M16EALL 64Mb Async/Page/Burst CellularRAM
IS67WVC4M16ECLL 64Mb Async/Page/Burst CellularRAM
IS67WVE1M16EALL 16Mb Async/Page PSRAM
IS67WVE1M16EBLL 16Mb Async/Page PSRAM
IS67WVE1M16ECLL 16Mb Async/Page PSRAM

IS67WV1M16EBLL Distributor