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DSEI8 - Fast Recovery Epitaxial Diode

Key Features

  • International standard package JEDEC TO-220 AC & TO-263 AB Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 q q q q q q q q Symbol Test Conditions typ. TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 8 A; Characteristic Values max. 20 10 1.5 1.3 1.5 0.98 28.7 2.5 mA mA mA V V V mW K/W K/W K/W ns A q q IR VR = VRRM VR = 0.8.
  • VRRM VR = 0.8.
  • VRRM TVJ = 150°C TVJ = 25°C q q VF VT0 rT RthJC Rt.

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Other Datasheets by IXYS (now Littelfuse)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Fast Recovery Epitaxial Diode (FRED) DSEI 8 IFAVM = 8 A VRRM = 600 V trr = 35 ns VRSM V 640 640 VRRM V 600 600 Type A C TO-263 AA DSEI 8-06AS NC A C (TAB) DSEI 8-06A DSEI 8-06AS Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 115°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 16 8 130 100 110 85 95 50 50 36 37 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s °C °C °C W Nm g TO-220 AC DSEI 8-06A C A C A = Anode, C = Cathode, NC = No connection TAB = Cathode TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.