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DSEI19 - Fast Recovery Epitaxial Diode

Key Features

  • International standard surface mount package JEDEC TO-263 AA Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Weight TO-263 AA Outline Symbol Test Conditions typ. TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 16 A; Characteristic Values max. 50 25 3 1.5 1.7 1.12 23.2 2 mA mA mA V V V mW K/W ns A Dim. A A1 b b2 c c2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Fast Recovery Epitaxial Diode (FRED) DSEI 19 VRRM = 600 V IFAVM = 20 A trr = 35 ns VRSM V 600 VRRM V 600 Type A C TO-263 AA NC A DSEI 19-06AS C (TAB) A = Anode, C = Cathode, NC = No connection, TAB = Cathode Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 65°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 25 20 150 100 110 85 95 50 50 36 37 -40...+150 150 -40...+150 TC = 25°C 61 2 A A A A A A A A2s A2s A2s A2s °C °C °C W g TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.