IXEH40N120D1 Overview
IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C = Collector, E = Emitter, TAB = Collector IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) VGE(th) I CES IGES QGon Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 0/15 V; TVJ = 125°C RBSOA, Clamped inductive load;.
IXEH40N120D1 Key Features
- IGBT with NPT (non punch through) structure
- reverse blocking capability
- function of series diode monolithically integrated, no external series diode required
- soft reverse recovery
- positive temperature coefficient of saturation voltage
- Epoxy of TO-247 package meets UL 94V-0