IXER60N120 Description
Advanced Technical Information .. NPT3 IGBT in ISOPLUS 247TM IXER 60N120 IC25 VCES VCE(sat) typ. C G = 95 A = 1200 V = 2.1 V ISOPLUS 247TM E153432 G C E E G = Gate Isolated Backside C = Collector E = Emitter Patent pending IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15.
IXER60N120 Key Features
- NPT3 IGBT
- low saturation voltage
- positive temperature coefficient for easy paralleling
- fast switching
- short tail current for optimized performance in resonant circuits
- ISOPLUS 247TM package
- isolated back surface
- low coupling capacity between pins and heatsink
- high reliability
- industry standard outline
IXER60N120 Applications
- single switches and with plementary free wheeling diodes