IXER35N120D1 Datasheet | IXYS

Features - NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits - Hi Per FREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current - ISOPLUS 247TM package - isolated back surface - low coupling capacity between pins and heatsink - high reliability - industry standard outline Applications - single switches - choppers with plementary free wheeling diodes - phaselegs, H bridges, three phase bridges e.g. for - power supplies, UPS - AC, DC and SR drives - induction heating Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.2 2.6 4.5 0.4 200 150 60 700 50 4.2 3.5 2 250 1.2 2.8 6.5 0.4 V V V m A m A n A ns ns ns ns m J m J n F n C 0.6 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon Rth JC Rth JH IC = 35 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1 m A; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 39 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 30 A © 2002 IXYS All rights reserved IXYS Semiconductor Gmb H Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXER 35N120D1 .. Diode Symbol IF25 IF90 Conditions TC = 25°C TC = 90°C Maximum Ratings 48 25 A A ISOPLUS 247 OUTLINE Symbol VF IRM t rr Rth JC Rth JH Conditions IF = 35 A; TVJ = 25°C TVJ = 125°C IF = 30 A; di F/dt = -500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.5 1.9 27 150 2.6 2.9 V V A ns 1.3 K/W...