IXER35N120D1 Description
Advanced Technical Information .. NPT3 IGBT with Diode in ISOPLUS 247TM IXER 35N120D1 IC25 VCES VCE(sat) typ. C G = 50 A = 1200 V = 2.2 V ISOPLUS 247TM E153432 G C E E G = Gate Isolated Backside C = Collector E = Emitter Patent pending IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15.
IXER35N120D1 Key Features
- NPT3 IGBT
- low saturation voltage
- positive temperature coefficient for easy paralleling
- fast switching
- short tail current for optimized performance in resonant circuits
- HiPerFREDTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
- ISOPLUS 247TM package