IXEN60N120 Datasheet | IXYS

Features - NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits - optional Hi Per FREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current - mini BLOC package - isolated copper base plate - screw terminals - kelvin emitter terminal for easy drive - industry standard outline Applications - single switches - choppers with plementary free wheeling diode - phaselegs, H bridges, three phase bridges e.g. for - power supplies, UPS - AC, DC and SR drives - induction heating Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.1 2.5 4.5 0.8 200 80 50 680 30 7.2 4.8 3.8 350 2.7 6.5 0.8 V V V m A m A n A ns ns ns ns m J m J n F n C 0.28 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon Rth JC IC = 60 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 m A; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 60 A VGE = ±15 V; RG = 22 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 50 A © 2003 IXYS All rights reserved IXYS Semiconductor Gmb H Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-4 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXEN 60N120 IXEN 60N120D1 .. Diode (D1 version only) Symbol IF25 IF90 Conditions TC = 25°C TC = 90°C Maximum Ratings Conduction Equivalent Circuits for Simulation 110 60 A A Symbol VF IRM t rr Rth JC Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.3 1.7 41 200 2.7 V V A ns 0.6...