Datasheet4U Logo Datasheet4U.com

IXFB50N80Q2 - HiPerFET Power MOSFETs Q-Class

Features

  • Double Metal Process for Low Gate Resistance Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Easy to Mount Space Savings High Power Density.

📥 Download Datasheet

Datasheet preview – IXFB50N80Q2

Datasheet Details

Part number IXFB50N80Q2
Manufacturer IXYS (now Littelfuse)
File Size 229.74 KB
Description HiPerFET Power MOSFETs Q-Class
Datasheet download datasheet IXFB50N80Q2 Datasheet
Additional preview pages of the IXFB50N80Q2 datasheet.

📁 Similar Datasheet

Other Datasheets by IXYS Corporation

Full PDF Text Transcription

Click to expand full text
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C IXFB50N80Q2 VDSS ID25 RDS(on) trr = = ≤ ≤ 800V 50A 160mΩ 300ns PLUS264 Maximum Ratings 800 800 ± 30 ± 40 50 200 50 5 20 1135 -55 ... +150 150 -55 ...
Published: |