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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB 60N80P
VDSS = 800 V ID25 = 60 A RDS(on) ≤ 140 mΩ ≤ 250 ns trr
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight
Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C
Maximum Ratings 800 800 ±30 ±40 60 150 30 100 5 20 1250 -55 ... +150 150 -55 ...
IXFB60N80P Datasheet
