IXFH18N100Q3 - Power MOSFET

Product Overview

IXYS Corporation

Part number	IXFH18N100Q3
Manufacturer	IXYS Corporation
File Size	188.59 KB
Description	Power MOSFET
Datasheet	IXFH18N100Q3 Datasheet
Additional preview pages of the IXFH18N100Q3 datasheet.

Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 300 260 1.13 / 10 4.0 6.0 Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max.

📁 Similar Datasheet

Other Datasheets by IXYS Corporation

Published: Feb 22, 2012 |