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IXFK15N100Q - HiPerFET Power MOSFETs

Download the IXFK15N100Q datasheet PDF. This datasheet also covers the IXFT15N100Q variant, as both devices belong to the same hiperfet power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z IXYS advanced low Qg process z International standard packages z Epoxy meet UL 94 V-0, flammability classification z Low RDS (on) low Qg z Avalanche energy and current rated z Fast intrinsic rectifier Advantages z Easy to mount z Space savings z High power density © 2001 IXYS All rights reserved 98627A (9/01) IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TO-247 AD (IXFH) Outline g fs Ciss Coss.

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Note: The manufacturer provides a single datasheet file (IXFT15N100Q_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFK15N100Q (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFK15N100Q. For precise diagrams, and layout, please refer to the original PDF.

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q VDSS = 1000 V ID25 = 15 A RDS(on) =...

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15N100Q IXFK 15N100Q IXFT 15N100Q VDSS = 1000 V ID25 = 15 A RDS(on) = 0.7 Ω trr ≤ 250 ns Preliminary data sheet TO-247 AD (IXFH) Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL M d Weight Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Maximum Ratings 1000 V 1000 V ±20 V ±30 V 15 A 60 A 15 A 45 mJ 1.5 J 5 V/ns 360 W -55 ...