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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM ID25 IDM IA
EAS
dV/dt
PD TJ TJM Tstg
TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C
TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (IXFK) Mounting force (IXFX) TO-264 TO-247
Maximum Ratings
900
V
900
V
± 20
V
± 30
V
25N90 25
A
25N90 100
A
26N90 26
A
26N90 104
A
25N90 25
A
26N90 26
A
3
J
5
V/ns
560
-55 ... +150 150
-55 ... +150
300 260
1.13/10
20..120 /4.5..
IXFK26N90 Datasheet
