IXFL30N120P - Polar HiPerFET Power MOSFET

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IXYS Corporation

Part number	IXFL30N120P
Manufacturer	IXYS Corporation
File Size	129.15 KB
Description	Polar HiPerFET Power MOSFET
Datasheet	IXFL30N120P Datasheet
Additional preview pages of the IXFL30N120P datasheet.

z z V~ N/lb. g z FC Weight UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V,.

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Published: May 13, 2011 |