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IXFL30N120P - Polar HiPerFET Power MOSFET

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Features

  • z z V~ N/lb. g z FC Weight UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V,.

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Datasheet Details

Part number IXFL30N120P
Manufacturer IXYS Corporation
File Size 129.15 KB
Description Polar HiPerFET Power MOSFET
Datasheet download datasheet IXFL30N120P Datasheet
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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL www.DataSheet4U.net IXFL30N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 18A 380mΩ 300ns ISOPLUS i5-PakTM (HV) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 18 80 15 1.5 15 357 -55 ... +150 150 -55 ... +150 Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA Mounting force t = 1s 300 260 2500 3000 40..120/4.5..
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