IXFL34N100 Description
+150 V V V V A A A J V/ns W °C °C °C °C °C N/lb.
IXFL34N100 Key Features
- High Power Dissipation
- Isolated Mounting Surface
- 2500V Electrical Isolation z Low Drain to Tab Capacitance(<30pF) z Low RDS (on) HDMOSTM Process z Rugged Polysilicon Gat