The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HiPerFETTM Power MOSFET ISOPLUS264TM
(Electrically Isolated Tab) Single-Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC VISOL Weight
www.DataSheet4U.net
IXFL34N100
VDSS = ID25 = RDS(on) ≤
1000V 30A 280mΩ
ISOPLUS264
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 1000 1000 ± 20 ± 30 30 136 34 4 5 550 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C N/lb. V~ V~ g Features
z
G D S ISOLATED TAB
G = Gate S = Source
D = Drain
1.6 mm (0.063 in.
IXFL34N100 Datasheet
