IXFL32N120P Description
+150 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ N/lb. g Advantages z z z z z G S D Isolated Tab G = Gate S = Source.
IXFL32N120P Key Features
- High Power Dissipation
- Isolated Mounting Surface
- 2500V Electrical Isolation Avalanche Rated Fast Intrinsic Diode