Datasheet4U Logo Datasheet4U.com

IXFL32N120P - Polar HiPerFET Power MOSFET

Key Features

  • z D = Drain Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Fast Intrinsic Diode Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting Force 300 260 2500 3000 40..120/4.5..27 8 FC Weight Easy Assembly Space Savings High Power Density.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFL38N100Q2 Power MOSFET IXYS
IXFL44N100P Power MOSFET Littelfuse
IXF18102 10Gbps Physical Layer Device Intel Corporation
IXF18104 10 Gigabit Lan PHY Intel Corporation
IXFA102N15T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFL30N120P Polar HiPerFET Power MOSFET
IXFL34N100 HiPerFET Power MOSFET ISOPLUS264
IXFL36N110P Polar Power MOSFET HiPerFET
IXFL38N100P Polar Power MOSFET HiPerFET
IXFL39N90 HiPerFET Power MOSFETs ISOPLUS264

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL www.DataSheet4U.net IXFL32N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 24A 340mΩ 300ns ISOPLUS i5-PakTM Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 24 100 16 2 20 520 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ N/lb.