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IXFL36N110P Datasheet Polar Power MOSFET Hiperfet

Manufacturer: IXYS (now Littelfuse)

Overview: Advance Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight ..net IXFL36N110P VDSS ID25 RDS(on) trr = = ≤ ≤ 1100V 26A 260mΩ 300ns ISOPLUS i5-PakTM (HV) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1100 1100 ± 30 ± 40 26 110 18 2 20 520 -55 ... +150 150 -55 ... +150 Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA Mounting force t = 1s 300 260 2500 3000 40..120/4.5..27 8 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ N/lb.

Key Features

  • z z z UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 18A, Note 1 TJ.

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