IXFL36N110P
IXFL36N110P is Polar Power MOSFET HiPerFET manufactured by IXYS.
Advance Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight
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VDSS ID25
RDS(on) trr
= = ≤ ≤
1100V 26A 260mΩ 300ns
ISOPLUS i5-PakTM (HV) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1100 1100 ± 30 ± 40 26 110 18 2 20 520 -55 ... +150 150 -55 ... +150 Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute...
