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IXFL44N60 - HiPerFET Power MOSFETs Single Die MOSFET

Key Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFL 44N60 VDSS = ID25 = RDS(on) = trr ≤ 250 ns 600 V 41 A 130 mΩ Maximum Ratings 600 600 ±20 ±30 41 176 44 60 3 5 500 -55 ... +150 150 -55 ...