IXFM75N10 Datasheet | IXYS

Hi Per FETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V ID25 RDS(on) 67 A 25 m W 75 A 20 m W trr £ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 67N10 75N10 67N10 75N10 67N10 75N10 Maximum Ratings 100 100 ±20 ±30 67 75 268 300 67 75 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A m J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-204 AE (IXFM) D G = Gate, S = Source, D = Drain, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4 ±100 TJ = 25°C TJ = 125°C 250 1 0.025 0.020 V V n A m A m A W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 m A VDS = VGS, ID = 4 m A VGS = ±20 VDC, VDS = 0 VDS = 0.8 - VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays q q q q q q q q 67N10 75N10 Pulse test, t £ 300 ms, duty cycle d £ 2 % Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density q q q IXYS reserves the right to change limits, test conditions, and dimensions. 91521F...