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IXFP22N60P3 - Power MOSFET

Key Features

  • z z z z 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque TO-220 TO-3P TO-247 300 260 1.13 / 10 3.0 5.5 6.0 Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1.5mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 V V nA z z z High Power.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 VDSS ID25 RDS(on) = 600V = 22A ≤ 360mΩ TO-220AB (IXFP) G DS Tab TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 22 55 11 400 35 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g g G D S G D S Tab TO-247 (IXFH) Tab D = Drain Tab = Drain G = Gate S = Source Features z z z z 1.