Overview: Advance Technical Information Polar3TM HiperFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 VDSS ID25 RDS(on) = 600V = 22A ≤ 360mΩ TO-220AB (IXFP) G DS Tab TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight
..net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 22 55 11 400 35 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in.