Overview: Preliminary Technical Information High Voltage HiperFET
(Electrically Isolated Tab) IXFP05N100M RDS(on) trr VDSS ID25 = 1000V = 700mA ≤ 17Ω ≤ 300ns N-Channel Enhancement Mode Avalanche Rated
OVERMOLDED TO-220 (IXFP...M) OUTLINE Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
..net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 700 3 1 100 5 25 - 55 ... +150 150 - 55 ... +150 V V V V mA A A mJ V/ns W °C °C °C °C °C Nm/lb.in.