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IXFP05N100M - High Voltage HiperFET

Key Features

  • Plastic overmolded tab for electrical isolation International standard package Avalanche rated Low package inductance Advantages Easy to mount Space savings High power density V 4.5 V G Isolated Tab D S D = Drain G = Gate S = Source 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 s Mounting torque 300 260 1.13/10 2.5 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±30V, VDS = 0V VDS = VD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information High Voltage HiperFET (Electrically Isolated Tab) IXFP05N100M RDS(on) trr VDSS ID25 = 1000V = 700mA ≤ 17Ω ≤ 300ns N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 (IXFP...M) OUTLINE Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 700 3 1 100 5 25 - 55 ... +150 150 - 55 ... +150 V V V V mA A A mJ V/ns W °C °C °C °C °C Nm/lb.in.