IXFP05N100M
IXFP05N100M is High Voltage HiperFET manufactured by IXYS.
Preliminary Technical Information
High Voltage Hiper FET
(Electrically Isolated Tab)
RDS(on) trr
VDSS ID25
= 1000V = 700m A ≤ 17Ω ≤ 300ns
N-Channel Enhancement Mode Avalanche Rated
OVERMOLDED TO-220 (IXFP...M) OUTLINE Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
..net
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C
Maximum Ratings 1000 1000 ± 30 ± 40 700 3 1 100 5 25
- 55 ... +150 150
- 55 ... +150 V V V V m A A A m J V/ns W °C °C °C °C °C Nm/lb.in. g Features
Plastic overmolded tab for electrical isolation International standard package Avalanche rated Low package inductance Advantages Easy to mount Space savings High power density V 4.5 V G Isolated Tab D S D = Drain
G = Gate S = Source
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque
300 260 1.13/10 2.5
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C
Characteristic Values Min. Typ. Max. 1000 2.5
±100 n A 25 μA 500 μA 15 17 Ω
VGS = 10V, ID = 375m A, Note 1
© 2008 IXYS CORPORATION, All rights reserved
DS100069(11/08)
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 0.55 0.93 260 VGS = 0V, VDS = 25V, f = 1MHz Resistive Switching Times VGS = 10V, VDS = 0.5 RG = 47Ω (External) VDSS, ID = 1A 22 8 11 19 40 28 7.8 VGS= 10V, VDS = 0.5 VDSS, ID = 1A 1.4 4.1 S p F p F p F ns ns ns ns n C n C n C 5.0 °C/W
Terminals: 1
- Gate 2
- Drain (Collector) 3
- Source (Emitter) 1 2 3
ISOLATED TO-220 (IXFP...M) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC
VDS = 20V, ID = 500m A, Note...
