IXFP10N80P
IXFP10N80P is Power MOSFET manufactured by IXYS.
Polar HVTM Hi Per FET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-263 AA (IXFA)
IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P
TO-220AB (IXFP)
VDSS ID25 trr
RDS(on)
= 800V = 10A ≤ 1.1Ω ≤ 250ns
TO-3P (IXFQ)
G S D (TAB) G DS D (TAB)
D (TAB)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d V/dt PD TJ TJM Tstg TL TSOLD Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 800 800 ±30 ±40 10 30 5 600 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A m J V/ns W °C °C °C °C °C Nm/lb.in. g g g g
TO-247 (IXFH)
D (TAB) D = Drain TAB = Drain
G = Gate S = Source
Features z z z z
1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque TO-263 TO-220 TO-3P TO-247 (TO-220,TO-247)
300 260 1.13 / 10 2.5 3.0 5.5 6.0 Characteristic Values Min. Typ. Max. 800 3.0 5.5 ±100 25
International Standard Packages Avalanche Rated Low Package Inductance Easy to Drive and to Protect
Advantages z z z
Easy to Mount Space Savings High Power Density
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 2.5m A VGS = ± 30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 0.5
- ID25, Note 1
Applications z
V V n A μA μA Ω z z z z
Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls
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