IXFP12N50PM
IXFP12N50PM is Power MOSFET manufactured by IXYS.
Polar TM Power MOSFET Hi Per FETTM
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
VDSS ID25 trr
RDS(on)
= 500V = 6A ≤ 500mΩ ≤ 300ns
OVERMOLDED TO-220 (IXFP...M) OUTLINE Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
..net
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C
Maximum Ratings 500 500 ± 30 ± 40 6 30 12 600 10 50
- 55 ... +150 150
- 55 ... +150 V V V V A A A m J V/ns W °C °C °C °C °C Nm/lb.in. g Features
Plastic overmolded tab for electrical isolation International standard package Unclamped Inductive Switching (UIS) rated Low package inductance
- easy to drive and to protect G Isolated Tab D S D = Drain
G = Gate S = Source
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque
300 260 1.13/10 2.5
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1m A VGS = ±30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 6A, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 500 3.0 5.5 V V
Advantages Easy to mount Space savings
±100 n A 5 μA 250 μA 500 mΩ
© 2008 IXYS CORPORATION, All rights reserved
DS99510F(04/08)
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 7.5 13 1830 VGS = 0V, VDS = 25V, f = 1MHz 182 16 22 VGS = 10V, VDS = 0.5 RG = 10Ω (External) VDSS, ID = 6A 27 65 20 29 VGS= 10V, VDS = 0.5 VDSS, ID = 6A 11 10 S p F p F p F ns ns ns ns n C n C n C 2.5 °C/W
Terminals: 1
- Gate 2
- Drain (Collector) 3
- Source (Emitter) 1 2 3
ISOLATED TO-220 (IXFP...M) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC
VDS= 10V, ID = 6A, Note...
