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Advance Technical Information
IXFA 12N50P IXFP 12N50P
PolarHVTM Power www.DataSheet4U.com MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFA 12N50P IXFP 12N50P
VDSS ID25
RDS(on) trr
= 500 = 12 ≤ 0.5 ≤ 200
V A Ω ns
Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C
Maximum Ratings 500 500 ± 40 ± 30 12 20 12 24 600 20 200 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ
TO-263 (IXFA)
G
S (TAB)
TO-220 (IXFP)
G
V/ns W °C °C °C °C °C
G = Gate S = Source
D S
(TAB)
D = Drain TAB = Drain
Features
z z
1.