IXFP12N50P
IXFP12N50P is Polar MOSFETs manufactured by IXYS.
Advance Technical Information
IXFA 12N50P IXFP 12N50P
Polar HVTM Power .. MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFA 12N50P IXFP 12N50P
VDSS ID25
RDS(on) trr
= 500 = 12 ≤ 0.5 ≤ 200
V A Ω ns
Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C
Maximum Ratings 500 500 ± 40 ± 30 12 20 12 24 600 20 200 -55 ... +150 150 -55 ... +150 V V V V A A A m J m J
TO-263 (IXFA)
S (TAB)
TO-220 (IXFP)
V/ns W °C °C °C °C °C
G = Gate S = Source
(TAB)
D = Drain TAB = Drain
Features z z
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-220 TO-263 (TO-220)
300 260
1.13/10 Nm/lb.in. 4 3 g g z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance
- easy to drive and to protect
Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 1 m A VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.5 ±100 5 150 V V n A μA μA z z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25, Note 1
500 mΩ
DS99436(09/05)...
