IXFP10N60P Datasheet | IXYS

Advance Technical Information .. Polar HVTM Hi Per FET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 10N60P IXFP 10N60P VDSS = 600 V ID25 = 10 A RDS(on) ≤ 740 mΩ ≤ 250 ns trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 10 25 10 18 500 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A m J m J V/ns W °C °C °C °C °C TO-220 (IXFP) (TAB) TO-263 (IXFA) S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-220 TO-263 (TO-220) 300 260 Md Weight 1.13/10 Nm/lb.in. z 4 3 g g International standard packages Fast Intrinsic Diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 m A VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.5 ±100 5 150 740 V V n A µA µA mΩ Advantages z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99424(09/05)...