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IXFP10N60P - Polar MOSFET

Key Features

  • z z z 1.6 mm (0.062 in. ) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-220 TO-263 (TO-220) 300 260 Md Weight 1.13/10 Nm/lb. in. z 4 3 g g International standard packages Fast Intrinsic Diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 mA VGS = ± 30 VDC,.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 10N60P IXFP 10N60P VDSS = 600 V ID25 = 10 A RDS(on) ≤ 740 mΩ ≤ 250 ns trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 10 25 10 18 500 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C TO-220 (IXFP) G D S (TAB) TO-263 (IXFA) G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z 1.6 mm (0.