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IXFR44N80P - Power MOSFET

Features

  • z z z 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 seconds 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120 /4.5..25 5 z z z N/lb g Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(.

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www.DataSheet4U.com PolarHV HiPerFET Power MOSFET Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM IXFR 44N80P VDSS ID25 RDS(on) trr = 800 V = 25 A ≤ 190 mΩ ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 800 800 ± 30 ± 40 25 100 25 80 3.4 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C V~ ISOPLUS247 (IXFR) E153432 Isolated Tab G = Gate S = Source D = Drain Features z z z 1.6 mm (0.062 in.
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