IXFR44N80P Description
+150 V V V V A A A mJ J V/ns W °C °C °C °C °C V~ ISOPLUS247 (IXFR) E153432 Isolated Tab G = Gate S = Source D = Drain.
IXFR44N80P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<30pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell