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HiPerFETTM Power MOSFETs
Single MOSFET Die
IXFX 62N25 IXFK 62N25
VDSS ID25
RDS(on)
= 250 V = 62 A = 35 mΩ
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 250 250 ± 20 ± 30 62 248 62 45 1.5 5 390 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C
PLUS 247TM (IXFX)
G
(TAB) D
TO-264 AA (IXFK)
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in.