IXGH30N120B3
IXGH30N120B3 is GenX3 1200V IGBTs manufactured by IXYS.
- Part of the IXGA30N120B3 comparator family.
- Part of the IXGA30N120B3 comparator family.
Gen X3TM 1200V IGBTs
High-Speed Low-Vsat PT IGBTs 3-20 k Hz Switching
IXGA30N120B3 IXGP30N120B3 IXGH30N120B3
VCES IC110 VCE(sat) tfi(typ)
TO-263 (IXGA)
= = ≤£ =
1200V 30A 3.5V 204ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C
Maximum Ratings 1200 1200 ± 20 ± 30 60 30 150 ICM = 60 VCE ≤ VCES 300
- 55 ... +150 150
- 55 ... +150 W °C °C °C °C °C Nm/lb.in. g g g Features z
V V V V A A A A TO-247 (IXGH) TO-220 (IXGP)
C (Tab)
C (Tab)
C (Tab) C = Collector Tab = Collector
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247
300 260 1.13/10 2.5 3.0 6.0
G = Gate E = Emitter
..net z z
Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC = 30A, VGE = 15V, Note 1 TJ = 125°C TJ = 125°C
Characteristic Values Min. Typ. Max. 1200 3.0 5.0 V V
Advantages z z
High Power Density Low Gate Drive Requirement
100 μA 1 m A ±100 2.96 2.95 3.5 n A V V
Applications z z z z z z
Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines
© 2009 IXYS CORPORATION, All Rights Reserved
DS99730B(10/09)...
