IXGH30N30 Description
HiPerFASTTM IGBT IXGH30N30 VCES IC25 VCE(sat) tfi = = = = 300 V 60 A 1.6 V 180 ns Preliminary data .. Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 300 260 1.13/10 TO-247 AD 6 W °C °C °C °C °C Nm/lb.in.
IXGH30N30 Key Features
- International standard package
- High current handling capability
- Newest generation HDMOSTM
- MOS Gate turn-on
- drive simplicity