Datasheet4U Logo Datasheet4U.com

IXGH30N120B3D1 - GenX3 1200V IGBTs

Key Features

  • z Optimized for low conduction and switching losses z Square RBSOA z Anti-parallel ultra fast diode z International standard packages Advantages z High power density z Low gate drive requirement.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXGH30N60B2D1 IGBT IXYS
IXGH30N60C2 HiPerFAST IGBT IXYS
IXGH30N60C2D1 HiPerFAST IGBT IXYS
IXGH30N60C3C1 High-Speed PT IGBT IXYS
IXGH32N120A3 Ultra-Low Vsat PT IGBT IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXGH30N120B3 GenX3 1200V IGBTs
IXGH30N120C3H1 High speed PT IGBTs
IXGH30N30 HiPerFAST IGBT
IXGH30N60 Low VCE(sat) IGBT
IXGH30N60A Low VCE(sat) IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching IXGH30N120B3D1 IXGT30N120B3D1 VCES IC110 VCE(sat) tfi(typ) = 1200V = 30A ≤£ 3.5V = 204ns Symbol VCES VCGR VGES VGEM IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load TC = 25°C Mounting torque (TO-247) Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s TO-247 TO-268 Maximum Ratings 1200 1200 V V ±20 ±30 30 28 150 ICM = 60 @ 0.8 • VCE 300 V V A A A A W -55 ... +150 150 -55 ... +150 1.13 / 10 300 260 6 4 °C °C °C Nm/lb.in.