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IXGH30N120B3D1 - GenX3 1200V IGBTs

Features

  • z Optimized for low conduction and switching losses z Square RBSOA z Anti-parallel ultra fast diode z International standard packages Advantages z High power density z Low gate drive requirement.

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Datasheet Details

Part number IXGH30N120B3D1
Manufacturer IXYS Corporation
File Size 209.87 KB
Description GenX3 1200V IGBTs
Datasheet download datasheet IXGH30N120B3D1 Datasheet
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GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching IXGH30N120B3D1 IXGT30N120B3D1 VCES IC110 VCE(sat) tfi(typ) = 1200V = 30A ≤£ 3.5V = 204ns Symbol VCES VCGR VGES VGEM IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load TC = 25°C Mounting torque (TO-247) Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s TO-247 TO-268 Maximum Ratings 1200 1200 V V ±20 ±30 30 28 150 ICM = 60 @ 0.8 • VCE 300 V V A A A A W -55 ... +150 150 -55 ... +150 1.13 / 10 300 260 6 4 °C °C °C Nm/lb.in.
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