IXGH30N120C3H1 Description
+150 °C °C °C 1.13/10 Nm/lb.in. 1200 V 3.0 5.0 V 100 μA 1.5 mA ±100 nA 3.6 4.2 V 3.2 V TO-247AD G C E TAB G = Gate E = Emitter C = Collector TAB = Collector.
IXGH30N120C3H1 is High speed PT IGBTs manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXGH30N120B3 | GenX3 1200V IGBTs |
| IXGH30N120B3D1 | GenX3 1200V IGBTs |
| IXGH30N30 | HiPerFAST IGBT |
| IXGH30N60 | Low VCE(sat) IGBT |
| IXGH30N60A | Low VCE(sat) IGBT |
+150 °C °C °C 1.13/10 Nm/lb.in. 1200 V 3.0 5.0 V 100 μA 1.5 mA ±100 nA 3.6 4.2 V 3.2 V TO-247AD G C E TAB G = Gate E = Emitter C = Collector TAB = Collector.