IXGH30N120C3H1 - High speed PT IGBTs

Features

z Optimized for Low Conduction and Switching Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z Avalanche Rated z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

IXYS Corporation

Datasheet Details

Part number	IXGH30N120C3H1
Manufacturer	IXYS Corporation
File Size	177.14 KB
Description	High speed PT IGBTs
Datasheet	IXGH30N120C3H1 Datasheet
Additional preview pages of the IXGH30N120C3H1 datasheet.

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Full PDF Text Transcription

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Preliminary Technical Information GenX3TM 1200V IGBT IXGH30N120C3H1 High speed PT IGBTs for 10-50kHz Switching VCES IC100 VCE(sat) tfi(typ) = 1200V = 24A ≤ 4.2V = 42ns Symbol VCES VCGR VGES VGEM IC25 IC100 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Mounting Torque Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Maximum Ratings 1200 1200 V V ±20 V ±30 V 48 A 24 A 115 A 20 A 250 mJ ICM = 60 @VCE ≤ 1200 250 A V W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in.

Published: Aug 13, 2015 |