IXGH31N60U1 Description
Ultra-Low VCE(sat) IGBT with Diode IXGH 31N60U1 VCES IC25 VCE(sat) = 600 V = 40 A = 1.8 V bi Pack Symbol .. VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; +150 V V V V A A A A W °C °C °C TO-247 AD G C E C = Collector, TAB = Collector G = Gate, E = Emitter,.
IXGH31N60U1 Key Features
- for minimum on-state conduction losses MOS Gate turn-on
- drive simplicity Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM