IXGH38N60 Overview
Ultra-Low VCE(sat) IGBT IXGH 38N60 VCES I C25 VCE(sat) = 600 V = 76 A = 1.8 V .. Symbol Test Conditions TJ = 25°C to 150 °C TJ = 25°C to 150 °C; +150 V V V V A A A A W °C °C °C TO-247 AD V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ T JM Tstg Md Weight G C E C = Collector, TAB = Collector G = Gate, E = Emitter,.
IXGH38N60 Key Features
- for minimum on-state conduction losses High current handling capability MOS Gate turn-on
- drive simplicity