IXSN80N60AU1 Description
IGBT with Diode Short Circuit SOA Capability IXSN 80N60AU1 VCES IC25 VCE(sat) = 600 V = 160 A = 3V C G E .. E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC VISOL TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V A V V A A A A ms W V~ V~ °C °C °C miniBLOC, SOT-227 B E153432 G E E C E = Emitter , G = Gate, C = Collector E = Emitter Either Emitter terminal...
IXSN80N60AU1 Key Features
- high power dissipation l Isolation voltage 3000 V~ l UL registered E 153432 l Low VCE(sat)
- for minimum on-state conduction losses l Fast Recovery Epitaxial Diode
- short trr and IRM l Low collector-to-case capacitance (< 60 pF)
- reduced RFI l Low package inductance (< 10 nH)
- easy to drive and to protect