IXSN80N60BD1 Description
IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE(sat) tfi C G E = = = = 600 V 160 A 2.5 V 180 ns Preliminary Data Sheet E .. Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V A V V V CES V CGR V GES VGEM IC25 IL IC90 I CM SSOA (RBSOA) t SC (SCSOA) PC V ISOL TJ T JM T stg Md Weight miniBLOC, SOT-227 B E153432 E G E A A A A A µs W V~ V~ °C °C °C g C E = Emitter c, G = Gate, C...
IXSN80N60BD1 Key Features
- high power dissipation z Isolation voltage 3000 V~ z UL registered E 153432 z Low VCE(sat)
- for minimum on-state conduction losses z Fast Recovery Epitaxial Diode
- short trr and IRM z Low collector-to-case capacitance (< 60 pF)
- reduced RFI z Low package inductance (< 10 nH)
- easy to drive and to protect