IXSN80N60BD1 - High Current IGBT

Product Overview

IXYS Corporation

Part number	IXSN80N60BD1
Manufacturer	IXYS Corporation
File Size	627.37 KB
Description	High Current IGBT
Datasheet	IXSN80N60BD1 Datasheet
Additional preview pages of the IXSN80N60BD1 datasheet.

International standard package z Aluminium-nitride isolation - high power dissipation z Isolation voltage 3000 V~ z UL registered E 153432 z Low VCE(sat) - for minimum on-state conduction losses z Fast Recovery Epitaxial Diode - short trr and IRM z Low collector-to-case capacitance (< 60 pF) - reduced RFI z Low package inductance (< 10 nH) - easy to drive and to protect z B V CES V GE(th) I CES I GES VCE(sat) IC IC = 500 µA, VGE = 0 V = 8 mA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±.

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Published: Aug 19, 2008 |