Overview: IGBT with Diode
Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE(sat) tfi
C G E = = = = 600 V 160 A 2.5 V 180 ns Preliminary Data Sheet E www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (Silicon chip capability) Lead current limit (RMS) TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Maximum Ratings 600 600 ± 20 ± 30 160 100 80 300 ICM = 160 @ 0.8 VCES 10 420 2500 3000 -55 ... +150 150 -55 ... +150 V A V V V CES V CGR V GES VGEM IC25 IL IC90 I CM SSOA (RBSOA) t SC (SCSOA) PC V ISOL TJ T JM T stg Md Weight miniBLOC, SOT-227 B E153432
E G E A A A A A µs W V~ V~ °C °C °C g C E = Emitter c, G = Gate, C = Collector E = Emitter c c Either Emitter terminal can be used as Main or Kelvin Emitter Mounting torque 0.4/6 Nm/lb.in. 30 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 8 200 2 ±200 2.
