Overview: High Current MegaMOSTMFET
N-Channel Enhancement Mode Preliminary Data Sheet IXTK 62N25 VDSS = ID25 = = RDS(on) 250 V
62 A 35 mΩ Symbol Test conditions VDSS VDGR
VGS VGSM
ID25 IDM IAR
EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ
Continuous Transient TC = 25°C TTCC = = 25°C, 25°C pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 Maximum ratings 250 V 250 V ±20 V ±30 V 62 A 248 A 62 A 45 mJ 1.5 J 5 V/ns TO-264 G D S D (TAB) G = Gate S = Source D = Drain Tab = Drain 390
-55 ... +150 150
-55 ... +150
300
0.7/6
10 W
°C °C °C °C Nm/lb.in.
