IXTK120N25 Description
+150 300 0.7/6 10 W °C °C °C °C Nm/lb.in.
IXTK120N25 Key Features
- Low RDS (on) HDMOSTM process -Rugged polysilicon gate cell structure -International standard package -Fast switching tim
- Part: IXTK120N25
- Manufacturer: IXYS
- Size: 574.21 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXTK120N25P | PolarHT Power MOSFET |
| IXTK128N15 | Power MOSFET |
| IXTK100N25P | N-Channel MOSFET |
| IXTK102N30P | PolarHT Power MOSFET |
| IXTK140N20P | Power MOSFET |