The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
High Current MegaMOSTMFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTK 120N25
VDSS =
ID25
=
= RDS(on)
250 V
120 A 20 mΩ
Symbol Test conditions
VDSS VDGR
VGS VGSM
ID25 ID(RMS) IDM IAR
EAR EAS
dv/dt
PD
TJ TJM Tstg
TL
Md
Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264
Maximum ratings
250
V
250
V
±20
V
±30
V
120
A
75
A
480
A
90
A
80
mJ
4.0
J
10
V/ns
TO-264 AA (IXTK)
G D S
D (TAB)
G = Gate S = Source
D = Drain Tab = Drain
730
-55 ... +150 150
-55 ...
IXTK120N25 Datasheet
