Overview: High Current MegaMOSTMFET
N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS = ID25 = = RDS(on) 250 V
120 A 20 mΩ Symbol Test conditions VDSS VDGR
VGS VGSM
ID25 ID(RMS) IDM IAR
EAR EAS
dv/dt
PD
TJ TJM Tstg
TL
Md
Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 Maximum ratings 250 V 250 V ±20 V ±30 V 120 A 75 A 480 A 90 A 80 mJ 4.0 J 10 V/ns TO-264 AA (IXTK) G D S D (TAB) G = Gate S = Source D = Drain Tab = Drain 730
-55 ... +150 150
-55 ... +150
300
0.7/6
10 W
°C °C °C
°C
Nm/lb.in.
