Overview: PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTK120N25P Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS
dV/dt
PD TJ TJM Tstg TL TSOLD
Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Terminal Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque TO-264 Maximum Ratings 250 V 250 V ± 20 V ± 30 V 120 A 75 A 300 A 60 A 2.5 J 10 700 -55 ... +150 150 -55 ... +150 300 260 V/ns
W
°C °C °C °C °C 1.13/10 10 Nm/lb.in. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 500μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0 V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 250 V 2.5 5.
