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IXTQ100N25P - N-Channel MOSFET

Key Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99118E(12/05) Symbol gfs C iss C oss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS R thCS IXTK 100N25P IXTQ 100N25P IXTT 100N25P Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. TO-3P (IXTQ) Outline VDS= 10.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ Symbol Test Conditions Maximum Ratings TO-264 (IXTK) V DSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR E AR EAS dv/dt PD TJ T JM Tstg TL TSOLD M d Weight T J = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS T J ≤150° C, R G = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-3P TO-264 TO-268 250 V 250 V ±20 V ±30 V 100 A 75 A 250 A 60 A 60 mJ 2.0 J 10 V/ns 600 W -55 ...